? semiconductor components industries, llc, 2016 november, 2016 ? rev. 7 1 publication order number: mbrd5h100/d mbrd5h100, nbrd5h100 switch-mode schottky power rectifier surface mount power package this series of power rectifiers employs the schottky barrier principle in a large metal?to?silicon power diode. state?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. features ? guardring for stress protection ? low forward voltage ? 175 c operating junction temperature ? epoxy meets ul 94 v?0 @ 0.125 in ? short heat sink tab manufactured ? not sheared! ? nbrd prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant* mechanical characteristics: ? case: epoxy, molded, epoxy meets ul 94 v?0 ? weight: 0.4 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? device meets msl1 requirements ? esd ratings: ? machine model = c (> 400 v) ? human body model = 3b (> 8000 v) *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. schottky barrier rectifier 5 amperes, 100 volts www. onsemi.com marking diagram dpak case 369c yww b 5100g y = year ww = work week b5100 = device code g = pb?free package 1 3 4 (pin 1: no connect) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. device package shipping ? ordering information mbrd5h100t4g dpak (pb?free) 2,500 / tape & ree l nbrd5h100t4g dpak (pb?free) 2,500 / tape & ree l nbrd5h100t4g?vf01 dpak (pb?free) 2,500 / tape & ree l
mbrd5h100, nbrd5h100 www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r ) t c = 171 c i f(av) 5 a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 171 c i frm 10 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 105 a operating junction and storage temperature range (note 1) t j , t stg ?65 to +175 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance junction?to?case (note 2) junction?to?ambient (note 2) r jc r ja 1.6 95.8 c/w 2. when mounted using minimum recommended pad size on fr?4 board. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 3) (i f = 5 a, t j = 25 c) (i f = 5 a, t j = 125 c) v f 0.71 0.60 v maximum instantaneous reverse current (note 3) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r 4.5 3.5 ma a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width = 300 s, duty cycle 2.0%
mbrd5h100, nbrd5h100 www. onsemi.com 3 typical characteristics if, instantaneous forward current (a) vf, instantaneous forward voltage (v) 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 125 c 150 c 25 c figure 1. typical forward voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 100 if, instantaneous forward current (a) 125 c 150 c 25 c figure 2. maximum forward voltage vf, instantaneous forward voltage (v) ir, reverse current (ma) 0.00001 0.0001 0.001 0.01 0.1 1 10 0102030405060708090100 25 c 125 c 150 c 0.0001 0.001 0.01 0.1 1 10 100 0102030405060708090100 figure 3. typical reverse current figure 4. maximum reverse current vr, reverse voltage (v) ir, reverse current (ma) vr, reverse voltage (v) 125 c 150 c 25 c 0 20406080100 0 200 400 600 800 1000 1200 t j = 25 c f = 1 mhz c, capacitance (pf) figure 5. typical capacitance vr, reverse voltage (v) 160 t c , case temperature ( c) 8 7 5 6 4 i f(av) , average forward current (a) 3 2 1 145 150 155 180 0 figure 6. current derating, case 9 10 square 165 170 175 dc r jc = 1.6 c/w
mbrd5h100, nbrd5h100 www. onsemi.com 4 typical characteristics t a , ambient temperature ( c) 120 180 0 2 1 0 140 20 60 80 3 5 i f(av) , average forward current (a) figure 7. current derating, ambient dc square wave 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.001 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 10 15 05 20 4 2 0 6 8 10 12 i f(av) , average forward current (a) figure 8. forward power dissipation square wave dc p f(av) , average power dissipation (w) r(t) (c/w) figure 9. thermal response, junction?to?case 1.0 4 40 100 160 14 16 18 20 22 r ja = 95.8 c/w
mbrd5h100, nbrd5h100 www. onsemi.com 5 package dimensions dpak (single gauge) case 369c issue f 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mbrd5h100/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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